ELM56800EA MOSFET — Specifications & Equivalents
About the ELM56800EA
The ELM56800EA is an N-channel MOSFET with a drain–source voltage (VDS) rating of 30 V, a continuous drain current (ID) of 3.6 A and an on-resistance (RDS(on)) of 0.07 Ω. It can dissipate up to 2 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT-26 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 30 V
- Max continuous drain current (ID): 3.6 A
- On-resistance (RDS(on)): 0.07 Ω
- Power dissipation (PD): 2 W
- Max junction temperature (TJ): 150 °C
- Package: SOT-26
Typical applications
With its 30 V drain–source rating the ELM56800EA sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.
Gate drive and switching notes
Keep gate–source voltage within the ±12 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 12 ns and an output capacitance (Coss) of 40 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the ELM56800EA
A drop-in substitute for the ELM56800EA must be the same N-channel type and offer a drain–source rating of at least 30 V, a continuous drain current rating of at least 3.6 A and an on-resistance no higher than 0.07 Ω if efficiency and heat matter.
Mechanically, check the replacement against the SOT-26 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the ELM56800EA?
The ELM56800EA is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 30 V drain-source and 3.6 A continuous drain current.
What is the maximum voltage of the ELM56800EA?
The ELM56800EA has a maximum drain-source voltage (Vds) of 30 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the ELM56800EA handle?
It is rated for 3.6 A of continuous drain current, with power dissipation limited to 2 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the ELM56800EA?
On-resistance (Rds(on)) is 0.07 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the ELM56800EA come in?
It is listed in SOT-26. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the ELM56800EA?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 30 V |
| Gate-Source Voltage (Vgs) | 12 V |
| Drain Current (Id) | 3.6 A |
| Drain-Source On-Resistance (Rds) | 0.07 |
| Rise Time (tr) | 12 nS |
| Output Capacitance (Coss) | 40 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | SOT-26 |
| Power Dissipation (Pd) | 2 W |
Equivalent & Replacement Parts
No verified equivalents are listed for ELM56800EA yet.