APT10025JLC MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by Advanced Power Technology (now Microchip)
About the APT10025JLC
The APT10025JLC is an N-channel MOSFET with a drain–source voltage (VDS) rating of 1000 V, a continuous drain current (ID) of 34 A and an on-resistance (RDS(on)) of 0.25 Ω. It can dissipate up to 700 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT227 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 1000 V
- Max continuous drain current (ID): 34 A
- On-resistance (RDS(on)): 0.25 Ω
- Power dissipation (PD): 700 W
- Max junction temperature (TJ): 150 °C
- Package: SOT227
- Manufacturer: Commonly produced by Advanced Power Technology (now Microchip)
Typical applications
With its 1000 V drain–source rating the APT10025JLC sits in the ultra-high-voltage class of switching MOSFETs, typically found in industrial ignition and igniter circuits, high-voltage pulse generators and electrostatic and CRT deflection stages. Ratings at this level demand careful creepage/clearance and insulation design on the PCB.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 20 ns and an output capacitance (Coss) of 1370 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the APT10025JLC
A drop-in substitute for the APT10025JLC must be the same N-channel type and offer a drain–source rating of at least 1000 V, a continuous drain current rating of at least 34 A and an on-resistance no higher than 0.25 Ω if efficiency and heat matter.
Mechanically, check the replacement against the SOT227 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the APT10025JLC?
The APT10025JLC is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 1000 V drain-source and 34 A continuous drain current.
What is the maximum voltage of the APT10025JLC?
The APT10025JLC has a maximum drain-source voltage (Vds) of 1000 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the APT10025JLC handle?
It is rated for 34 A of continuous drain current, with power dissipation limited to 700 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the APT10025JLC?
On-resistance (Rds(on)) is 0.25 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the APT10025JLC come in?
It is listed in SOT227. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the APT10025JLC?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 1000 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 34 A |
| Drain-Source On-Resistance (Rds) | 0.25 |
| Rise Time (tr) | 20 nS |
| Output Capacitance (Coss) | 1370 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | SOT227 |
| Power Dissipation (Pd) | 700 W |
Equivalent & Replacement Parts
No verified equivalents are listed for APT10025JLC yet.