AON6414A MOSFET — Specifications & Equivalents

About the AON6414A

The AON6414A is an N-channel MOSFET with a drain–source voltage (V_DS) rating of 30 V, a continuous drain current (I_D) of 50 A and an on-resistance (R_DS(on)) of 0.008 Ω. It can dissipate up to 31 W and is rated to a junction temperature of 150 °C. It is supplied in the DFN5X6 package.

At a glance

• Type: N-channel MOSFET
• Max drain–source voltage (V_DS): 30 V
• Max continuous drain current (I_D): 50 A
• On-resistance (R_DS(on)): 0.008 Ω
• Gate threshold (V_GS(th)): 2.5 V
• Power dissipation (P_D): 31 W
• Max junction temperature (T_J): 150 °C
• Package: DFN5X6
• Manufacturer: Commonly produced by Alpha & Omega Semiconductor

Typical applications

With its 30 V drain–source rating the AON6414A sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.

The 50 A current rating puts it in high-current territory, where conduction loss (I² × R_DS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.

The low 0.008 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.

Gate drive and switching notes

A gate threshold (V_GS(th)) of 2.5 V means the AON6414A can usually be driven from 3.3 V or 5 V logic, though full enhancement still needs the gate taken clearly above the threshold.

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by a rise time of 2 ns and an output capacitance (C_oss) of 180 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the AON6414A

A drop-in substitute for the AON6414A must be the same N-channel type and offer a drain–source rating of at least 30 V, a continuous drain current rating of at least 50 A, an on-resistance no higher than 0.008 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.

Mechanically, check the replacement against the DFN5X6 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the AON6414A?

The AON6414A is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 30 V drain-source and 50 A continuous drain current.

What is the maximum voltage of the AON6414A?

The AON6414A has a maximum drain-source voltage (Vds) of 30 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the AON6414A handle?

It is rated for 50 A of continuous drain current, with power dissipation limited to 31 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the AON6414A?

On-resistance (Rds(on)) is 0.008 Ω. Multiply by the square of your load current to estimate conduction loss.

Is the AON6414A logic-level compatible?

Its gate threshold is 2.5 V, so it can generally be switched from 3.3 V or 5 V logic. Drive the gate well above the threshold for full enhancement.

What package does the AON6414A come in?

It is listed in DFN5X6. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the AON6414A?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.