AON6413 MOSFET — Specifications & Equivalents

About the AON6413

The AON6413 is a P-channel MOSFET with a drain–source voltage (V_DS) rating of 30 V, a continuous drain current (I_D) of 32 A and an on-resistance (R_DS(on)) of 0.0085 Ω. It can dissipate up to 48 W and is rated to a junction temperature of 150 °C. It is supplied in the DFN5X6 package.

At a glance

• Type: P-channel MOSFET
• Max drain–source voltage (V_DS): 30 V
• Max continuous drain current (I_D): 32 A
• On-resistance (R_DS(on)): 0.0085 Ω
• Gate threshold (V_GS(th)): 2.7 V
• Power dissipation (P_D): 48 W
• Max junction temperature (T_J): 150 °C
• Package: DFN5X6
• Manufacturer: Commonly produced by Alpha & Omega Semiconductor

Typical applications

With its 30 V drain–source rating the AON6413 sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.

The low 0.0085 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.

Gate drive and switching notes

With a gate threshold (V_GS(th)) of 2.7 V this is not a logic-level device: driving the gate directly from a 3.3 V or 5 V microcontroller pin will leave it only partly on and cause it to overheat. Use a gate driver or level shifter, typically taking V_GS to 10 V.

Keep gate–source voltage within the ±25 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by a rise time of 12 ns and an output capacitance (C_oss) of 474 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the AON6413

A drop-in substitute for the AON6413 must be the same P-channel type and offer a drain–source rating of at least 30 V, a continuous drain current rating of at least 32 A, an on-resistance no higher than 0.0085 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.

Mechanically, check the replacement against the DFN5X6 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the AON6413?

The AON6413 is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 30 V drain-source and 32 A continuous drain current.

What is the maximum voltage of the AON6413?

The AON6413 has a maximum drain-source voltage (Vds) of 30 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the AON6413 handle?

It is rated for 32 A of continuous drain current, with power dissipation limited to 48 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the AON6413?

On-resistance (Rds(on)) is 0.0085 Ω. Multiply by the square of your load current to estimate conduction loss.

Is the AON6413 logic-level compatible?

No. The gate threshold is 2.7 V, so a 3.3 V or 5 V logic output cannot fully turn it on. Use a gate driver and take Vgs to around 10 V.

What package does the AON6413 come in?

It is listed in DFN5X6. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the AON6413?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.