4N65G MOSFET — Specifications & Equivalents
MOSFET N -Channel - 4N65G
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 650 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 4 A |
| Drain-Source On-Resistance (Rds) | 2.5 |
| Rise Time (tr) | 45 nS |
| Output Capacitance (Coss) | 70 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO252 |
| Power Dissipation (Pd) | 22 W |
Equivalent & Replacement Parts
No verified equivalents are listed for 4N65G yet.