4N60CB MOSFET — Specifications & Equivalents

MOSFET N -Channel - 4N60CB

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)600 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)4 A
Drain-Source On-Resistance (Rds)2.2
Rise Time (tr)9 nS
Output Capacitance (Coss)54 pF
Junction Temperature (Tj)150 °C
PackageTO-220
Power Dissipation (Pd)50 W

Equivalent & Replacement Parts

No verified equivalents are listed for 4N60CB yet.

Browse all electronic components