3N190 MOSFET — Specifications & Equivalents
MOSFET P -Channel - 3N190
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | P -Channel |
| Drain-Source Voltage (Vds) | 40 V |
| Gate-Source Voltage (Vgs) | 6.5 V |
| Drain Current (Id) | 0.05 A |
| Drain-Source On-Resistance (Rds) | 300 |
| Rise Time (tr) | 30 nS |
| Output Capacitance (Coss) | 3 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO99 |
| Power Dissipation (Pd) | 0.375 W |
Equivalent & Replacement Parts
No verified equivalents are listed for 3N190 yet.