3N170 MOSFET — Specifications & Equivalents

MOSFET N -Channel - 3N170

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)25 V
Gate-Source Voltage (Vgs)35 V
Drain Current (Id)0.03 A
Drain-Source On-Resistance (Rds)200
Rise Time (tr)10 nS
Junction Temperature (Tj)175 °C
PackageTO72
Power Dissipation (Pd)0.3 W

Equivalent & Replacement Parts

No verified equivalents are listed for 3N170 yet.

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