3N163 MOSFET — Specifications & Equivalents

MOSFET P -Channel - 3N163

Key Specifications

TypeMOSFET
Channel TypeP -Channel
Drain-Source Voltage (Vds)40 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)0.05 A
Drain-Source On-Resistance (Rds)250
Rise Time (tr)24 nS
Output Capacitance (Coss)3 pF
Junction Temperature (Tj)150 °C
PackageTO72
Power Dissipation (Pd)0.375 W

Equivalent & Replacement Parts

No verified equivalents are listed for 3N163 yet.

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