2N7076 Transistor — Specifications & Equivalents
2N7076 Transistor Datasheet, 2N7076 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 150 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 200 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 28 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 850 pF |
| Package | TO254 |
| isc N-Channel MOSFET Transistor 2N7076DESCRIPTIONDrain Current I =28A@ T =25D CDrain Source Voltage- | V =200V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D |