2N7002W Transistor — Specifications & Equivalents
2N7002W Transistor Datasheet, 2N7002W Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.2 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 0.115 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Package | SOT323 |
| February 20102N7002WN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT-323Marking | 2NAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Par |