2N7002VC Transistor — Specifications & Equivalents
2N7002VC Transistor Datasheet, 2N7002VC Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.15 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 0.28 A |
| Cossⓘ - Output Capacitance | 50 pF |
| Package | SOT563 |
| April 20102N7002V/VAN-Channel Enhancement Mode Field Effect TransistorFeatures Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant(Pin4)SOT-563FMarking | AB Marking : AC* Pin1 and Pin4 are ex |