Question 1

What is 2N7002TE?

Accepted Answer

2N7002TE Transistor Datasheet, 2N7002TE Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N7002TE?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 0.15 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 0.29 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Package: SOT523, October 20072N7002TN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT - 523FMarking: AAAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol P

Question 3

What are equivalent components to 2N7002TE?

Accepted Answer

Common equivalents include: SI3475DV, SI4463BDY, SI7119DN, SI7129DN, SI9435BDY, SI9435DY, SIS2305PLT1G, XP162A11

2N7002TE Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	0.15 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	60 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	0.29 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Package	SOT523
October 20072N7002TN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT - 523FMarking	AAAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol P