2N7002KT Transistor — Specifications & Equivalents

2N7002KT Transistor Datasheet, 2N7002KT Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current0.115 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance10 pF
PackageSC89
2N7002KTN-Channel ENHANCEMENT MODE POWER MOSFET3P b Lead(Pb)-Free12FEATURESSC-89* Gate-Source ESD Protected: 1500 V* Fast Switching SpeedDrain* Low On-Resistance* Low Voltage Driver3APPLICATIONS:* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories* Battery Operated Systems* Power Supply Converter Circuits1 (Top View) 2* Load/Power Switching Ce
2N7002KT SOT-523 Plastic-Encapsulate Mosfets Features Gate 1 High density cell design for low R DS (ON) Voltage controlled small signal switch 3 Drain Rugged and reliable High saturation current capability Source 2Applications (Top View) Load Switch for Portable Devices DC/DC Converter MarkingKN Maximum Ratings (T =25C unless otherwise spe

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