2N7002KG8 MOSFET — Specifications & Equivalents
Manufacturer: Multi-source (JEDEC registered part number)
About the 2N7002KG8
The 2N7002KG8 is a MOSFET with a drain–source voltage (VDS) rating of 60 V and a continuous drain current (ID) of 0.115 A. It can dissipate up to 0.38 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT323 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 60 V
- Max continuous drain current (ID): 0.115 A
- Power dissipation (PD): 0.38 W
- Max junction temperature (TJ): 150 °C
- Package: SOT323
- Manufacturer: Multi-source (JEDEC registered part number)
Typical applications
With its 60 V drain–source rating the 2N7002KG8 sits in the mid-range class of switching MOSFETs, typically found in 24 V and 48 V industrial and battery systems, motor drives and H-bridges and load and hot-swap switching.
At 0.115 A it is aimed at small-signal and light-load switching rather than power conversion.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 6 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 2N7002KG8
A drop-in substitute for the 2N7002KG8 should match its polarity and offer a drain–source rating of at least 60 V and a continuous drain current rating of at least 0.115 A.
Mechanically, check the replacement against the SOT323 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Because 2N7002KG8 is a JEDEC-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 2N7002KG8?
The 2N7002KG8 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 60 V drain-source and 0.115 A continuous drain current.
What is the maximum voltage of the 2N7002KG8?
The 2N7002KG8 has a maximum drain-source voltage (Vds) of 60 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 2N7002KG8 handle?
It is rated for 0.115 A of continuous drain current, with power dissipation limited to 0.38 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the 2N7002KG8 come in?
It is listed in SOT323. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 2N7002KG8?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.38 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 0.115 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 6 pF |
| Package | SOT323 |
| May 20112N7002KWN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101DSSOT-323GMarking | 7KWAb |