Question 1

What is 2N7002K1?

Accepted Answer

2N7002K1 Transistor Datasheet, 2N7002K1 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N7002K1?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 0.35 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 0.3 A, Cossⓘ - Output Capacitance: 25 pF, Package: SOT-23, May 20112N7002KWN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101DSSOT-323GMarking: 7KWAb, January 20122N7002KN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical: 3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101DSGSOT-23

Question 3

What are equivalent components to 2N7002K1?

Accepted Answer

Common equivalents include: MRF184, MRF184S, MRF275G, MRF5003, MRF5007, MRF5007R1, MRF5015, MRF5035

2N7002K1 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	0.35 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	60 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	0.3 A
Cossⓘ - Output Capacitance	25 pF
Package	SOT-23
May 20112N7002KWN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101DSSOT-323GMarking	7KWAb
January 20122N7002KN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical	3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101DSGSOT-23