Question 1

What is 2N7000A?

Accepted Answer

2N7000A Transistor Datasheet, 2N7000A Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N7000A?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 0.4 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 0.2 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 11 pF, Package: TO92, 2N7000N-channel enhancement mode field-effect transistorRev. 03 19 May 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability: 2N7000 in SOT54 (TO-92 variant).2. Features TrenchMOS technology Very fast switching Logic level compatible.3. Applications Relay

Question 3

What are equivalent components to 2N7000A?

Accepted Answer

Common equivalents include: CEU3301, CEU3423, CEU4201, CEU4301, CEU4311, CEU6601, CEU6861, CEU95P04

2N7000A Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	0.4 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	60 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	0.2 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	11 pF
Package	TO92
2N7000N-channel enhancement mode field-effect transistorRev. 03 19 May 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability	2N7000 in SOT54 (TO-92 variant).2. Features TrenchMOS technology Very fast switching Logic level compatible.3. Applications Relay