2N6966JANTXV MOSFET — Specifications & Equivalents
Manufacturer: Multi-source (JEDEC registered part number)
About the 2N6966JANTXV
The 2N6966JANTXV is an N-channel MOSFET with a drain–source voltage (VDS) rating of 100 V, a continuous drain current (ID) of 20 A and an on-resistance (RDS(on)) of 0.085 Ω. It can dissipate up to 70 W and is rated to a junction temperature of 150 °C. It is supplied in the TO213 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 100 V
- Max continuous drain current (ID): 20 A
- On-resistance (RDS(on)): 0.085 Ω
- Power dissipation (PD): 70 W
- Max junction temperature (TJ): 150 °C
- Package: TO213
- Manufacturer: Multi-source (JEDEC registered part number)
Typical applications
With its 100 V drain–source rating the 2N6966JANTXV sits in the medium-voltage class of switching MOSFETs, typically found in 48 V and 96 V distribution systems, solar and telecom power stages, DC motor drives and intermediate-bus DC-DC converters.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 1.8 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 2N6966JANTXV
A drop-in substitute for the 2N6966JANTXV must be the same N-channel type and offer a drain–source rating of at least 100 V, a continuous drain current rating of at least 20 A and an on-resistance no higher than 0.085 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO213 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Because 2N6966JANTXV is a JEDEC-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 2N6966JANTXV?
The 2N6966JANTXV is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 100 V drain-source and 20 A continuous drain current.
What is the maximum voltage of the 2N6966JANTXV?
The 2N6966JANTXV has a maximum drain-source voltage (Vds) of 100 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 2N6966JANTXV handle?
It is rated for 20 A of continuous drain current, with power dissipation limited to 70 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the 2N6966JANTXV?
On-resistance (Rds(on)) is 0.085 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the 2N6966JANTXV come in?
It is listed in TO213. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 2N6966JANTXV?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 100 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 20 A |
| Drain-Source On-Resistance (Rds) | 0.085 |
| Output Capacitance (Coss) | 1.8 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO213 |
| Power Dissipation (Pd) | 70 W |
Equivalent & Replacement Parts
No verified equivalents are listed for 2N6966JANTXV yet.