2N6913A MOSFET — Specifications & Equivalents
Manufacturer: Multi-source (JEDEC registered part number)
About the 2N6913A
The 2N6913A is a MOSFET with a drain–source voltage (VDS) rating of 800 V and a continuous drain current (ID) of 6 A. It can dissipate up to 125 W and is rated to a junction temperature of 150 °C. It is supplied in the TO3 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 800 V
- Max continuous drain current (ID): 6 A
- Power dissipation (PD): 125 W
- Max junction temperature (TJ): 150 °C
- Package: TO3
- Manufacturer: Multi-source (JEDEC registered part number)
Typical applications
With its 800 V drain–source rating the 2N6913A sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Gate drive and switching notes
Switching behaviour is characterised by an output capacitance (Coss) of 5000 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 2N6913A
A drop-in substitute for the 2N6913A should match its polarity and offer a drain–source rating of at least 800 V and a continuous drain current rating of at least 6 A.
Mechanically, check the replacement against the TO3 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Because 2N6913A is a JEDEC-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 2N6913A?
The 2N6913A is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 800 V drain-source and 6 A continuous drain current.
What is the maximum voltage of the 2N6913A?
The 2N6913A has a maximum drain-source voltage (Vds) of 800 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 2N6913A handle?
It is rated for 6 A of continuous drain current, with power dissipation limited to 125 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the 2N6913A come in?
It is listed in TO3. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 2N6913A?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 125 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 800 V |
| |Id| ⓘ - Maximum Drain Current | 6 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 5000 pF |
| Package | TO3 |