2N6768JAN MOSFET — Specifications & Equivalents

Manufacturer: Multi-source (JEDEC registered part number)

About the 2N6768JAN

The 2N6768JAN is a MOSFET with a drain–source voltage (VDS) rating of 400 V and a continuous drain current (ID) of 14 A. It can dissipate up to 150 W and is rated to a junction temperature of 150 °C. It is supplied in the TO204 package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 400 V
  • Max continuous drain current (ID): 14 A
  • Power dissipation (PD): 150 W
  • Max junction temperature (TJ): 150 °C
  • Package: TO204
  • Manufacturer: Multi-source (JEDEC registered part number)

Typical applications

With its 400 V drain–source rating the 2N6768JAN sits in the medium-high-voltage class of switching MOSFETs, typically found in telecom and industrial DC rails, boost and flyback converters, LED and backlight drivers and power-factor-correction stages. Common where the bus sits well above 100 V but below rectified mains.

Gate drive and switching notes

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Choosing a replacement for the 2N6768JAN

A drop-in substitute for the 2N6768JAN should match its polarity and offer a drain–source rating of at least 400 V and a continuous drain current rating of at least 14 A.

Mechanically, check the replacement against the TO204 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Because 2N6768JAN is a JEDEC-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2N6768JAN?

The 2N6768JAN is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 400 V drain-source and 14 A continuous drain current.

What is the maximum voltage of the 2N6768JAN?

The 2N6768JAN has a maximum drain-source voltage (Vds) of 400 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the 2N6768JAN handle?

It is rated for 14 A of continuous drain current, with power dissipation limited to 150 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the 2N6768JAN come in?

It is listed in TO204. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2N6768JAN?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation150 W
|Vds|ⓘ - Maximum Drain-Source Voltage400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current14 A
Tj ⓘ - Maximum Junction Temperature150 °C
PackageTO204

Equivalent & Replacement Parts

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