2N6133 bipolar transistor — Specifications & Equivalents

About the 2N6133

The 2N6133 is a PNP bipolar transistor with a collector–emitter voltage (V_CEO) rating of 60 V, a continuous collector current (I_C) of 7 A and a DC current gain (h_FE) of 20–100. It can dissipate up to 50 W and is rated to a junction temperature of -65 to +150°C. It is supplied in the TO-220 package.

At a glance

• Type: PNP bipolar transistor
• Max collector–emitter voltage (V_CEO): 60 V
• Max collector current (I_C): 7 A
• DC current gain (h_FE): 20–100
• Transition frequency (f_T): 3 MHz
• Power dissipation (P_D): 50 W
• Max junction temperature (T_J): -65 to +150°C
• Package: TO-220
• Manufacturer: Multi-source (JEDEC registered part number)

Typical applications

Judging from its ratings the 2N6133 is generally applied in power output and driver stages.

A transition frequency (f_T) of 3 MHz indicates the frequency range over which useful current gain remains available.

The quoted current gain of 20–100 determines the base drive needed: divide your target collector current by the minimum h_FE, not the typical figure, when sizing the base resistor.

Biasing and absolute maximum ratings

Absolute-maximum breakdown limits are V_CEO 60 V, V_CBO 60 V and V_EBO 5 V (magnitudes). As a PNP device these are negative with respect to the emitter, so the collector sits below the emitter in normal operation. The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.

Dissipation is capped at 50 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.

Choosing a replacement for the 2N6133

A drop-in substitute for the 2N6133 must be the same PNP type and offer a collector–emitter rating of at least 60 V, a collector current rating of at least 7 A, current gain in the same ballpark as 20–100 and a transition frequency of at least 3 MHz for the same bandwidth.

Mechanically, check the replacement against the TO-220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Because 2N6133 is a JEDEC-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2N6133?

The 2N6133 is a PNP bipolar junction transistor (BJT). It is rated for 60 V collector-emitter and 7 A continuous collector current.

What is the maximum voltage of the 2N6133?

Maximum collector-emitter voltage (Vceo) is 60 V, and collector-base (Vcbo) is 60 V.

How much current can the 2N6133 handle?

Continuous collector current is rated at 7 A, with dissipation limited to 50 W.

What is the hFE of the 2N6133?

DC current gain (hFE) is quoted as 20–100. Size base drive from the minimum value so the transistor saturates fully across production spread.

What package does the 2N6133 come in?

It is listed in TO-220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2N6133?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.