2N6052G Transistor — Specifications & Equivalents

PNP Bipolar Transistor 2N6052G

Key Specifications

TypePNP
Collector-Emitter Voltage, max-100V
Collector-Base Voltage, max-100V
Emitter-Base Voltage, max-5V
Collector Current − Continuous, max-12A
Collector Dissipation150W
DC Current Gain (hfe)750to18000
Transition Frequency, min4MHz
Operating and Storage Junction Temperature Range-65 to +200°C
PackageTO-3

Equivalent & Replacement Parts

No verified equivalents are listed for 2N6052G yet.

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