2N5871 Transistor — Specifications & Equivalents

PNP Bipolar Transistor 2N5871

Key Specifications

TypePNP
Collector-Emitter Voltage, max-60V
Collector-Base Voltage, max-60V
Emitter-Base Voltage, max-5V
Collector Current − Continuous, max-7A
Collector Dissipation115W
DC Current Gain (hfe)20to100
Transition Frequency, min4MHz
Operating and Storage Junction Temperature Range-65 to +200°C
PackageTO-3

Equivalent & Replacement Parts

No verified equivalents are listed for 2N5871 yet.

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