2N5671 Transistor — Specifications & Equivalents

NPN Bipolar Transistor 2N5671

Key Specifications

TypeNPN
Collector-Emitter Voltage, max90V
Collector-Base Voltage, max120V
Emitter-Base Voltage, max7V
Collector Current − Continuous, max30A
Collector Dissipation140W
DC Current Gain (hfe)20to100
Transition Frequency, min40MHz
Operating and Storage Junction Temperature Range-65 to +200°C
PackageTO-3

Equivalent & Replacement Parts

No verified equivalents are listed for 2N5671 yet.

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