Question 1

What is 2N5657G?

Accepted Answer

NPN Bipolar Transistor 2N5657G

Question 2

What are the specifications of 2N5657G?

Accepted Answer

Key specifications include: Type: NPN, Collector-Emitter Voltage, max: 350V, Collector-Base Voltage, max: 375V, Emitter-Base Voltage, max: 6V, Collector Current − Continuous, max: 0.5A, Collector Dissipation: 20W, DC Current Gain (hfe): 30to250, Transition Frequency, min: 10MHz, Operating and Storage Junction Temperature Range: -65 to +150°C, Package: TO-126

Question 3

What are equivalent components to 2N5657G?

Accepted Answer

See the component details for equivalent parts.

2N5657G Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Type	NPN
Collector-Emitter Voltage, max	350V
Collector-Base Voltage, max	375V
Emitter-Base Voltage, max	6V
Collector Current − Continuous, max	0.5A
Collector Dissipation	20W
DC Current Gain (hfe)	30to250
Transition Frequency, min	10MHz
Operating and Storage Junction Temperature Range	-65 to +150°C
Package	TO-126