2N5656G Transistor — Specifications & Equivalents

NPN Bipolar Transistor 2N5656G

Key Specifications

TypeNPN
Collector-Emitter Voltage, max300V
Collector-Base Voltage, max325V
Emitter-Base Voltage, max6V
Collector Current − Continuous, max0.5A
Collector Dissipation20W
DC Current Gain (hfe)30to250
Transition Frequency, min10MHz
Operating and Storage Junction Temperature Range-65 to +150°C
PackageTO-126

Equivalent & Replacement Parts

No verified equivalents are listed for 2N5656G yet.

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