Question 1

What is 2N5630?

Accepted Answer

NPN Bipolar Transistor 2N5630

Question 2

What are the specifications of 2N5630?

Accepted Answer

Key specifications include: Type: NPN, Collector-Emitter Voltage, max: 120V, Collector-Base Voltage, max: 120V, Emitter-Base Voltage, max: 7V, Collector Current − Continuous, max: 16A, Collector Dissipation: 200W, DC Current Gain (hfe): 20to80, Transition Frequency, min: 1MHz, Operating and Storage Junction Temperature Range: -65 to +200°C, Package: TO-3

Question 3

What are equivalent components to 2N5630?

Accepted Answer

See the component details for equivalent parts.

2N5630 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Type	NPN
Collector-Emitter Voltage, max	120V
Collector-Base Voltage, max	120V
Emitter-Base Voltage, max	7V
Collector Current − Continuous, max	16A
Collector Dissipation	200W
DC Current Gain (hfe)	20to80
Transition Frequency, min	1MHz
Operating and Storage Junction Temperature Range	-65 to +200°C
Package	TO-3