2N5629 Transistor — Specifications & Equivalents

NPN Bipolar Transistor 2N5629

Key Specifications

TypeNPN
Collector-Emitter Voltage, max100V
Collector-Base Voltage, max100V
Emitter-Base Voltage, max7V
Collector Current − Continuous, max16A
Collector Dissipation200W
DC Current Gain (hfe)25to100
Transition Frequency, min1MHz
Operating and Storage Junction Temperature Range-65 to +200°C
PackageTO-3

Equivalent & Replacement Parts

No verified equivalents are listed for 2N5629 yet.

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