2N5551G Transistor — Specifications & Equivalents
NPN Bipolar Transistor 2N5551G
Key Specifications
| Type | NPN |
|---|---|
| Collector-Emitter Voltage, max | 160V |
| Collector-Base Voltage, max | 180V |
| Emitter-Base Voltage, max | 6V |
| Collector Current − Continuous, max | 0.6A |
| Collector Dissipation | 0.625W |
| DC Current Gain (hfe) | 80to250 |
| Transition Frequency, min | 100MHz |
| Noise Figure, max | 8dB |
| Operating and Storage Junction Temperature Range | -55 to +150°C |
| Package | TO-92 |
Equivalent & Replacement Parts
No verified equivalents are listed for 2N5551G yet.