2N5337 bipolar transistor — Specifications & Equivalents

Manufacturer: Multi-source (JEDEC registered part number)

About the 2N5337

The 2N5337 is an NPN bipolar transistor with a collector–emitter voltage (VCEO) rating of 80 V, a continuous collector current (IC) of 5 A and a DC current gain (hFE) of 60–240. It can dissipate up to 6 W and is rated to a junction temperature of -65 to +200°C. It is supplied in the TO-39 package.

At a glance

  • Type: NPN bipolar transistor
  • Max collector–emitter voltage (VCEO): 80 V
  • Max collector current (IC): 5 A
  • DC current gain (hFE): 60–240
  • Transition frequency (fT): 30 MHz
  • Power dissipation (PD): 6 W
  • Max junction temperature (TJ): -65 to +200°C
  • Package: TO-39
  • Manufacturer: Multi-source (JEDEC registered part number)

Typical applications

A transition frequency (fT) of 30 MHz indicates the frequency range over which useful current gain remains available.

The quoted current gain of 60–240 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.

Biasing and absolute maximum ratings

Absolute-maximum breakdown limits are VCEO 80 V, VCBO 80 V and VEBO 6 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.

Dissipation is capped at 6 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.

Choosing a replacement for the 2N5337

A drop-in substitute for the 2N5337 must be the same NPN type and offer a collector–emitter rating of at least 80 V, a collector current rating of at least 5 A, current gain in the same ballpark as 60–240 and a transition frequency of at least 30 MHz for the same bandwidth.

Mechanically, check the replacement against the TO-39 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Because 2N5337 is a JEDEC-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2N5337?

The 2N5337 is an NPN bipolar junction transistor (BJT). It is rated for 80 V collector-emitter and 5 A continuous collector current.

What is the maximum voltage of the 2N5337?

Maximum collector-emitter voltage (Vceo) is 80 V, and collector-base (Vcbo) is 80 V.

How much current can the 2N5337 handle?

Continuous collector current is rated at 5 A, with dissipation limited to 6 W.

What is the hFE of the 2N5337?

DC current gain (hFE) is quoted as 60–240. Size base drive from the minimum value so the transistor saturates fully across production spread.

What package does the 2N5337 come in?

It is listed in TO-39. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2N5337?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.

Key Specifications

TypeNPN
Collector-Emitter Voltage, max80V
Collector-Base Voltage, max80V
Emitter-Base Voltage, max6V
Collector Current − Continuous, max5A
Collector Dissipation6W
DC Current Gain (hfe)60to240
Transition Frequency, min30MHz
Operating and Storage Junction Temperature Range-65 to +200°C
PackageTO-39

Equivalent & Replacement Parts

No verified equivalents are listed for 2N5337 yet.

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