2N5115UBE3 MOSFET — Specifications & Equivalents

JFET P -Channel - 2N5115UBE3

Key Specifications

TypeJFET
Channel TypeP -Channel
Drain-Source Voltage (Vds)30 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)0.06 A
Drain-Source On-Resistance (Rds)100
Rise Time (tr)20 nS
Junction Temperature (Tj)200 °C
PackageTO-18
Power Dissipation (Pd)0.5 W

Equivalent & Replacement Parts

No verified equivalents are listed for 2N5115UBE3 yet.

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