2N456A bipolar transistor — Specifications & Equivalents

Manufacturer: Multi-source (JEDEC registered part number)

About the 2N456A

The 2N456A is a PNP bipolar transistor with a collector–emitter voltage (VCEO) rating of 20 V, a continuous collector current (IC) of 7 A and a DC current gain (hFE) of 30–90. It can dissipate up to 85 W and is rated to a junction temperature of -65 to +110°C. It is supplied in the TO-3 package.

At a glance

  • Type: PNP bipolar transistor
  • Max collector–emitter voltage (VCEO): 20 V
  • Max collector current (IC): 7 A
  • DC current gain (hFE): 30–90
  • Power dissipation (PD): 85 W
  • Max junction temperature (TJ): -65 to +110°C
  • Package: TO-3
  • Manufacturer: Multi-source (JEDEC registered part number)

Typical applications

Judging from its ratings the 2N456A is generally applied in power output and driver stages.

The quoted current gain of 30–90 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.

Biasing and absolute maximum ratings

Absolute-maximum breakdown limits are VCEO 20 V, VCBO 40 V and VEBO 20 V (magnitudes). As a PNP device these are negative with respect to the emitter, so the collector sits below the emitter in normal operation. The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.

Dissipation is capped at 85 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.

Choosing a replacement for the 2N456A

A drop-in substitute for the 2N456A must be the same PNP type and offer a collector–emitter rating of at least 20 V, a collector current rating of at least 7 A and current gain in the same ballpark as 30–90.

Mechanically, check the replacement against the TO-3 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Because 2N456A is a JEDEC-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2N456A?

The 2N456A is a PNP bipolar junction transistor (BJT). It is rated for 20 V collector-emitter and 7 A continuous collector current.

What is the maximum voltage of the 2N456A?

Maximum collector-emitter voltage (Vceo) is 20 V, and collector-base (Vcbo) is 40 V.

How much current can the 2N456A handle?

Continuous collector current is rated at 7 A, with dissipation limited to 85 W.

What is the hFE of the 2N456A?

DC current gain (hFE) is quoted as 30–90. Size base drive from the minimum value so the transistor saturates fully across production spread.

What package does the 2N456A come in?

It is listed in TO-3. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2N456A?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.

Key Specifications

TypePNP
Collector-Emitter Voltage, max-20V
Collector-Base Voltage, max-40V
Emitter-Base Voltage, max-20V
Collector Current − Continuous, max-7A
Collector Dissipation85W
DC Current Gain (hfe)30to90
Operating and Storage Junction Temperature Range-65 to +110°C
PackageTO-3

Equivalent & Replacement Parts

No verified equivalents are listed for 2N456A yet.

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