2N4360 MOSFET — Specifications & Equivalents

MOSFET P -Channel - 2N4360

Key Specifications

TypeMOSFET
Channel TypeP -Channel
Drain-Source Voltage (Vds)20 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)0.02 A
Drain-Source On-Resistance (Rds)700
Junction Temperature (Tj)125 °C
PackageTO-18
Power Dissipation (Pd)0.5 W

Equivalent & Replacement Parts

No verified equivalents are listed for 2N4360 yet.

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