2N3026 bipolar transistor — Specifications & Equivalents
Manufacturer: Multi-source (JEDEC registered part number)
About the 2N3026
The 2N3026 is a PNP bipolar transistor with a collector–emitter voltage (VCEO) rating of 60 V, a continuous collector current (IC) of 3 A and a DC current gain (hFE) of 50–180. It can dissipate up to 25 W and is rated to a junction temperature of -65 to +200°C. It is supplied in the TO-3 package.
At a glance
- Type: PNP bipolar transistor
- Max collector–emitter voltage (VCEO): 60 V
- Max collector current (IC): 3 A
- DC current gain (hFE): 50–180
- Power dissipation (PD): 25 W
- Max junction temperature (TJ): -65 to +200°C
- Package: TO-3
- Manufacturer: Multi-source (JEDEC registered part number)
Typical applications
Judging from its ratings the 2N3026 is generally applied in power output and driver stages.
The quoted current gain of 50–180 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.
Biasing and absolute maximum ratings
Absolute-maximum breakdown limits are VCEO 60 V, VCBO 60 V and VEBO 4 V (magnitudes). As a PNP device these are negative with respect to the emitter, so the collector sits below the emitter in normal operation. The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.
Dissipation is capped at 25 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.
Choosing a replacement for the 2N3026
A drop-in substitute for the 2N3026 must be the same PNP type and offer a collector–emitter rating of at least 60 V, a collector current rating of at least 3 A and current gain in the same ballpark as 50–180.
Mechanically, check the replacement against the TO-3 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Because 2N3026 is a JEDEC-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 2N3026?
The 2N3026 is a PNP bipolar junction transistor (BJT). It is rated for 60 V collector-emitter and 3 A continuous collector current.
What is the maximum voltage of the 2N3026?
Maximum collector-emitter voltage (Vceo) is 60 V, and collector-base (Vcbo) is 60 V.
How much current can the 2N3026 handle?
Continuous collector current is rated at 3 A, with dissipation limited to 25 W.
What is the hFE of the 2N3026?
DC current gain (hFE) is quoted as 50–180. Size base drive from the minimum value so the transistor saturates fully across production spread.
What package does the 2N3026 come in?
It is listed in TO-3. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 2N3026?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | PNP |
|---|---|
| Collector-Emitter Voltage, max | -60V |
| Collector-Base Voltage, max | -60V |
| Emitter-Base Voltage, max | -4V |
| Collector Current − Continuous, max | -3A |
| Collector Dissipation | 25W |
| DC Current Gain (hfe) | 50to180 |
| Operating and Storage Junction Temperature Range | -65 to +200°C |
| Package | TO-3 |
Equivalent & Replacement Parts
No verified equivalents are listed for 2N3026 yet.