2DA1213O bipolar transistor — Specifications & Equivalents
About the 2DA1213O
The 2DA1213O is a PNP bipolar transistor with a collector–emitter voltage (VCEO) rating of 50 V, a continuous collector current (IC) of 2 A and a DC current gain (hFE) of 70–140. It can dissipate up to 1 W and is rated to a junction temperature of -55 to +150°C. It is supplied in the SOT-89 package.
At a glance
- Type: PNP bipolar transistor
- Max collector–emitter voltage (VCEO): 50 V
- Max collector current (IC): 2 A
- DC current gain (hFE): 70–140
- Transition frequency (fT): 160 MHz
- Power dissipation (PD): 1 W
- Max junction temperature (TJ): -55 to +150°C
- Package: SOT-89
Typical applications
Judging from its ratings the 2DA1213O is generally applied in RF and high-speed switching stages.
A transition frequency (fT) of 160 MHz indicates the frequency range over which useful current gain remains available.
The quoted current gain of 70–140 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.
Biasing and absolute maximum ratings
Absolute-maximum breakdown limits are VCEO 50 V, VCBO 50 V and VEBO 6 V (magnitudes). As a PNP device these are negative with respect to the emitter, so the collector sits below the emitter in normal operation. The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.
Dissipation is capped at 1 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.
Choosing a replacement for the 2DA1213O
A drop-in substitute for the 2DA1213O must be the same PNP type and offer a collector–emitter rating of at least 50 V, a collector current rating of at least 2 A, current gain in the same ballpark as 70–140 and a transition frequency of at least 160 MHz for the same bandwidth.
Mechanically, check the replacement against the SOT-89 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 2DA1213O?
The 2DA1213O is a PNP bipolar junction transistor (BJT). It is rated for 50 V collector-emitter and 2 A continuous collector current.
What is the maximum voltage of the 2DA1213O?
Maximum collector-emitter voltage (Vceo) is 50 V, and collector-base (Vcbo) is 50 V.
How much current can the 2DA1213O handle?
Continuous collector current is rated at 2 A, with dissipation limited to 1 W.
What is the hFE of the 2DA1213O?
DC current gain (hFE) is quoted as 70–140. Size base drive from the minimum value so the transistor saturates fully across production spread.
What package does the 2DA1213O come in?
It is listed in SOT-89. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 2DA1213O?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | PNP |
|---|---|
| Collector-Emitter Voltage, max | -50V |
| Collector-Base Voltage, max | -50V |
| Emitter-Base Voltage, max | -6V |
| Collector Current − Continuous, max | -2A |
| Collector Dissipation | 1W |
| DC Current Gain (hfe) | 70to140 |
| Transition Frequency, min | 160MHz |
| Operating and Storage Junction Temperature Range | -55 to +150°C |
| Package | SOT-89 |
Equivalent & Replacement Parts
No verified equivalents are listed for 2DA1213O yet.