20N60 MOSFET — Specifications & Equivalents

About the 20N60

The 20N60 is an N-channel MOSFET with a drain–source voltage (V_DS) rating of 600 V, a continuous drain current (I_D) of 20 A and an on-resistance (R_DS(on)) of 0.32 Ω. It can dissipate up to 416 W and is rated to a junction temperature of 150 °C. It is available in TO-3P, TO-247 and TO-230 packages, so confirm the pinout of the exact variant you order.

At a glance

• Type: N-channel MOSFET
• Max drain–source voltage (V_DS): 600 V
• Max continuous drain current (I_D): 20 A
• On-resistance (R_DS(on)): 0.32 Ω
• Gate threshold (V_GS(th)): 4 V
• Power dissipation (P_D): 416 W
• Max junction temperature (T_J): 150 °C
• Package: TO-3P, TO-247, TO-230

Typical applications

With its 600 V drain–source rating the 20N60 sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

Gate drive and switching notes

With a gate threshold (V_GS(th)) of 4 V this is not a logic-level device: driving the gate directly from a 3.3 V or 5 V microcontroller pin will leave it only partly on and cause it to overheat. Use a gate driver or level shifter, typically taking V_GS to 10 V.

Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Total gate charge (Q_g) of 170 nC sets the drive current required: average gate current is roughly Q_g × switching frequency, so faster switching needs a stronger driver.

Switching behaviour is characterised by a rise time of 130 ns and an output capacitance (C_oss) of 330 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the 20N60

A drop-in substitute for the 20N60 must be the same N-channel type and offer a drain–source rating of at least 600 V, a continuous drain current rating of at least 20 A, an on-resistance no higher than 0.32 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.

Mechanically, check the replacement against the TO-3P, TO-247 and TO-230 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 20N60?

The 20N60 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 600 V drain-source and 20 A continuous drain current.

What is the maximum voltage of the 20N60?

The 20N60 has a maximum drain-source voltage (Vds) of 600 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the 20N60 handle?

It is rated for 20 A of continuous drain current, with power dissipation limited to 416 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the 20N60?

On-resistance (Rds(on)) is 0.32 Ω. Multiply by the square of your load current to estimate conduction loss.

Is the 20N60 logic-level compatible?

No. The gate threshold is 4 V, so a 3.3 V or 5 V logic output cannot fully turn it on. Use a gate driver and take Vgs to around 10 V.

What package does the 20N60 come in?

It is listed in TO-3P, TO-247 and TO-230. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 20N60?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.