20N06 Transistor — Specifications & Equivalents
20N06 Transistor Datasheet, 20N06 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 40 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 20 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Package | TO252 |
Equivalent & Replacement Parts
- SI2314
- SI2315
- SI2319
- SI2323
- SI2328
- SIA519
- XP151A13AO
- XP152A12CO
- IRF520
- 60N03
- 70N03
- 90N03
- SSS10N60
- SSS12N60
- SSS1N60
- SSS2N60
- SSS5N60