19N10 MOSFET — Specifications & Equivalents
MOSFET N -Channel - 19N10
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 100 V |
| Gate-Source Voltage (Vgs) | 25 V |
| Drain Current (Id) | 15.6 A |
| Drain-Source On-Resistance (Rds) | 0.078 |
| Rise Time (tr) | 150 nS |
| Output Capacitance (Coss) | 165 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO-3P TO-251 TO-252 TO-220 TO-263 |
| Power Dissipation (Pd) | 178 W |
Equivalent & Replacement Parts
No verified equivalents are listed for 19N10 yet.