19N10 MOSFET — Specifications & Equivalents

MOSFET N -Channel - 19N10

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)100 V
Gate-Source Voltage (Vgs)25 V
Drain Current (Id)15.6 A
Drain-Source On-Resistance (Rds)0.078
Rise Time (tr)150 nS
Output Capacitance (Coss)165 pF
Junction Temperature (Tj)150 °C
PackageTO-3P TO-251 TO-252 TO-220 TO-263
Power Dissipation (Pd)178 W

Equivalent & Replacement Parts

No verified equivalents are listed for 19N10 yet.

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