15N65L-TQ2-R MOSFET — Specifications & Equivalents
About the 15N65L-TQ2-R
The 15N65L-TQ2-R is a MOSFET with a drain–source voltage (VDS) rating of 650 V and a continuous drain current (ID) of 15 A. It can dissipate up to 250 W and is rated to a junction temperature of 150 °C. It is supplied in the TO-263 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 650 V
- Max continuous drain current (ID): 15 A
- Power dissipation (PD): 250 W
- Max junction temperature (TJ): 150 °C
- Package: TO-263
Typical applications
With its 650 V drain–source rating the 15N65L-TQ2-R sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 260 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 15N65L-TQ2-R
A drop-in substitute for the 15N65L-TQ2-R should match its polarity and offer a drain–source rating of at least 650 V and a continuous drain current rating of at least 15 A.
Mechanically, check the replacement against the TO-263 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 15N65L-TQ2-R?
The 15N65L-TQ2-R is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 650 V drain-source and 15 A continuous drain current.
What is the maximum voltage of the 15N65L-TQ2-R?
The 15N65L-TQ2-R has a maximum drain-source voltage (Vds) of 650 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 15N65L-TQ2-R handle?
It is rated for 15 A of continuous drain current, with power dissipation limited to 250 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the 15N65L-TQ2-R come in?
It is listed in TO-263. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 15N65L-TQ2-R?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 250 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 650 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 15 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 260 pF |
| Package | TO-263 |
| IKB15N65EH5High speed switching series 5th generationTRENCHSTOPTM 5 high speed switching IGBT copacked with full ratedcurrent RAPID 1 anti parallel diodeCFeatures and Benefits | High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies 650V breakdown voltageG Low QGE IGBT copacked with full rated current RAPID 1 fas |
| IGB15N65S5High speed switching series fifth generationTRENCHSTOPTM 5 high speed soft switching IGBTFeatures and Benefits | CHigh speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal currentCEsat Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q EG Maxim |
| SPP15N65C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 650 VDS Low gate chargeR 0.28DS(on),max Extreme dv/dt ratedQ 63 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220-3-1CoolMOS C3 designed for | Notebook AdapterType Package MarkingSPP15N65C3 |
| SPF15N65T1T1TL650V /15A Trench Field Stop IGBT Features V 650 V CE Max Junction Temperature 150C High breakdown voltage up to 650V for I 15 A Cimproved reliabilityV I =15A 1.65 V CE(SAT) C Short Circuit Rated Very Low Saturation Voltage | V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching applicat |
| SPD15N65T1T0TL650V /15A Trench Field Stop IGBT V 650 V CEFeatures I 15 A C Max Junction Temperature 150C High breakdown voltage up to 650V forV I =15A 1.65 V CE(SAT) Cimproved reliability Short Circuit Rated Very Low Saturation Voltage | V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching appli |
| SPF15N65T1T2TL650V /15A Trench Field Stop IGBT Features V 650 V CE Max Junction Temperature 150C High breakdown voltage up to 650V for I 15 A Cimproved reliabilityV I =15A 1.65 V CE(SAT) C Short Circuit Rated Very Low Saturation Voltage | V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching applicat |
| SPD15N65T1650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150CV 650 V CE High breakdown voltage up to 650V forimproved reliabilityI 15 A C Short Circuit RatedV I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage | V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application |
| SPT15N65T1650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150CV 650 V CE High breakdown voltage up to 650V forimproved reliabilityI 15 A C Short Circuit RatedV I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage | V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application |
| YGF15N65T2 YGK15N65T2 YGP15N65T2 650V /15A Trench Field Stop IGBT Features Max Junction Temperature 175C V 650 V CE High breakdown voltage up to 650V for improved reliability I 15 A C Short Circuit Rated V I =15A 1.50 V CE(SAT) C Very Low Saturation Voltage | V = 1.50V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications |
| isc N-Channel MOSFET Transistor 15N65FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage | V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONSwitch regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET |