15N65L-TQ2-R Transistor — Specifications & Equivalents
15N65L-TQ2-R Transistor Datasheet, 15N65L-TQ2-R Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 250 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 650 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 15 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 260 pF |
| Package | TO-263 |
| IKB15N65EH5High speed switching series 5th generationTRENCHSTOPTM 5 high speed switching IGBT copacked with full ratedcurrent RAPID 1 anti parallel diodeCFeatures and Benefits | High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies 650V breakdown voltageG Low QGE IGBT copacked with full rated current RAPID 1 fas |
| IGB15N65S5High speed switching series fifth generationTRENCHSTOPTM 5 high speed soft switching IGBTFeatures and Benefits | CHigh speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal currentCEsat Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q EG Maxim |
| SPP15N65C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 650 VDS Low gate chargeR 0.28DS(on),max Extreme dv/dt ratedQ 63 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220-3-1CoolMOS C3 designed for | Notebook AdapterType Package MarkingSPP15N65C3 |
| SPF15N65T1T1TL650V /15A Trench Field Stop IGBT Features V 650 V CE Max Junction Temperature 150C High breakdown voltage up to 650V for I 15 A Cimproved reliabilityV I =15A 1.65 V CE(SAT) C Short Circuit Rated Very Low Saturation Voltage | V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching applicat |
| SPD15N65T1T0TL650V /15A Trench Field Stop IGBT V 650 V CEFeatures I 15 A C Max Junction Temperature 150C High breakdown voltage up to 650V forV I =15A 1.65 V CE(SAT) Cimproved reliability Short Circuit Rated Very Low Saturation Voltage | V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching appli |
| SPF15N65T1T2TL650V /15A Trench Field Stop IGBT Features V 650 V CE Max Junction Temperature 150C High breakdown voltage up to 650V for I 15 A Cimproved reliabilityV I =15A 1.65 V CE(SAT) C Short Circuit Rated Very Low Saturation Voltage | V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching applicat |
| SPD15N65T1650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150CV 650 V CE High breakdown voltage up to 650V forimproved reliabilityI 15 A C Short Circuit RatedV I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage | V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application |
| SPT15N65T1650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150CV 650 V CE High breakdown voltage up to 650V forimproved reliabilityI 15 A C Short Circuit RatedV I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage | V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application |
| YGF15N65T2 YGK15N65T2 YGP15N65T2 650V /15A Trench Field Stop IGBT Features Max Junction Temperature 175C V 650 V CE High breakdown voltage up to 650V for improved reliability I 15 A C Short Circuit Rated V I =15A 1.50 V CE(SAT) C Very Low Saturation Voltage | V = 1.50V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications |
| isc N-Channel MOSFET Transistor 15N65FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage | V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONSwitch regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET |