13N110A MOSFET — Specifications & Equivalents
About the 13N110A
The 13N110A is an N-channel MOSFET with a drain–source voltage (VDS) rating of 1100 V, a continuous drain current (ID) of 13 A and an on-resistance (RDS(on)) of 0.92 Ω. It can dissipate up to 360 W and is rated to a junction temperature of 150 °C. It is supplied in the TO-247AD package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 1100 V
- Max continuous drain current (ID): 13 A
- On-resistance (RDS(on)): 0.92 Ω
- Power dissipation (PD): 360 W
- Max junction temperature (TJ): 150 °C
- Package: TO-247AD
Typical applications
With its 1100 V drain–source rating the 13N110A sits in the ultra-high-voltage class of switching MOSFETs, typically found in industrial ignition and igniter circuits, high-voltage pulse generators and electrostatic and CRT deflection stages. Ratings at this level demand careful creepage/clearance and insulation design on the PCB.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 21 ns and an output capacitance (Coss) of 400 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 13N110A
A drop-in substitute for the 13N110A must be the same N-channel type and offer a drain–source rating of at least 1100 V, a continuous drain current rating of at least 13 A and an on-resistance no higher than 0.92 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO-247AD footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 13N110A?
The 13N110A is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 1100 V drain-source and 13 A continuous drain current.
What is the maximum voltage of the 13N110A?
The 13N110A has a maximum drain-source voltage (Vds) of 1100 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 13N110A handle?
It is rated for 13 A of continuous drain current, with power dissipation limited to 360 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the 13N110A?
On-resistance (Rds(on)) is 0.92 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the 13N110A come in?
It is listed in TO-247AD. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 13N110A?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 1100 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 13 A |
| Drain-Source On-Resistance (Rds) | 0.92 |
| Rise Time (tr) | 21 nS |
| Output Capacitance (Coss) | 400 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO-247AD |
| Power Dissipation (Pd) | 360 W |
Equivalent & Replacement Parts
No verified equivalents are listed for 13N110A yet.