125N10T MOSFET — Specifications & Equivalents
About the 125N10T
The 125N10T is an N-channel MOSFET with a drain–source voltage (VDS) rating of 100 V, a continuous drain current (ID) of 120 A and an on-resistance (RDS(on)) of 0.0058 Ω. It can dissipate up to 192 W and is rated to a junction temperature of 175 °C. It is supplied in the TO220 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 100 V
- Max continuous drain current (ID): 120 A
- On-resistance (RDS(on)): 0.0058 Ω
- Power dissipation (PD): 192 W
- Max junction temperature (TJ): 175 °C
- Package: TO220
Typical applications
With its 100 V drain–source rating the 125N10T sits in the medium-voltage class of switching MOSFETs, typically found in 48 V and 96 V distribution systems, solar and telecom power stages, DC motor drives and intermediate-bus DC-DC converters.
The 120 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
The low 0.0058 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 19.2 ns and an output capacitance (Coss) of 680 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 125N10T
A drop-in substitute for the 125N10T must be the same N-channel type and offer a drain–source rating of at least 100 V, a continuous drain current rating of at least 120 A and an on-resistance no higher than 0.0058 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 125N10T?
The 125N10T is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 100 V drain-source and 120 A continuous drain current.
What is the maximum voltage of the 125N10T?
The 125N10T has a maximum drain-source voltage (Vds) of 100 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 125N10T handle?
It is rated for 120 A of continuous drain current, with power dissipation limited to 192 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the 125N10T?
On-resistance (Rds(on)) is 0.0058 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the 125N10T come in?
It is listed in TO220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 125N10T?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 100 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 120 A |
| Drain-Source On-Resistance (Rds) | 0.0058 |
| Rise Time (tr) | 19.2 nS |
| Output Capacitance (Coss) | 680 pF |
| Junction Temperature (Tj) | 175 °C |
| Package | TO220 |
| Power Dissipation (Pd) | 192 W |
Equivalent & Replacement Parts
No verified equivalents are listed for 125N10T yet.