11N65GS MOSFET — Specifications & Equivalents
About the 11N65GS
The 11N65GS is an N-channel MOSFET with a drain–source voltage (VDS) rating of 650 V, a continuous drain current (ID) of 11 A and an on-resistance (RDS(on)) of 0.4 Ω. It can dissipate up to 120 W and is rated to a junction temperature of 150 °C. It is supplied in the TO252 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 650 V
- Max continuous drain current (ID): 11 A
- On-resistance (RDS(on)): 0.4 Ω
- Power dissipation (PD): 120 W
- Max junction temperature (TJ): 150 °C
- Package: TO252
Typical applications
With its 650 V drain–source rating the 11N65GS sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 4 ns and an output capacitance (Coss) of 87 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 11N65GS
A drop-in substitute for the 11N65GS must be the same N-channel type and offer a drain–source rating of at least 650 V, a continuous drain current rating of at least 11 A and an on-resistance no higher than 0.4 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO252 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 11N65GS?
The 11N65GS is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 650 V drain-source and 11 A continuous drain current.
What is the maximum voltage of the 11N65GS?
The 11N65GS has a maximum drain-source voltage (Vds) of 650 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 11N65GS handle?
It is rated for 11 A of continuous drain current, with power dissipation limited to 120 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the 11N65GS?
On-resistance (Rds(on)) is 0.4 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the 11N65GS come in?
It is listed in TO252. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 11N65GS?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 650 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 11 A |
| Drain-Source On-Resistance (Rds) | 0.4 |
| Rise Time (tr) | 4 nS |
| Output Capacitance (Coss) | 87 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO252 |
| Power Dissipation (Pd) | 120 W |
Equivalent & Replacement Parts
No verified equivalents are listed for 11N65GS yet.