11N10G MOSFET — Specifications & Equivalents

MOSFET N -Channel - 11N10G

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)100 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)11 A
Drain-Source On-Resistance (Rds)0.095
Rise Time (tr)3 nS
Output Capacitance (Coss)120 pF
Junction Temperature (Tj)175 °C
PackageTO-252
Power Dissipation (Pd)28 W

Equivalent & Replacement Parts

No verified equivalents are listed for 11N10G yet.

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