10N65KG-TM3-T Transistor — Specifications & Equivalents
10N65KG-TM3-T Transistor Datasheet, 10N65KG-TM3-T Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 52 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 650 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 10 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 125 pF |
| Package | TO-251 |