Question 1

What is 10N60L-TQ2-R?

Accepted Answer

10N60L-TQ2-R Transistor Datasheet, 10N60L-TQ2-R Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 10N60L-TQ2-R?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 156 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V, |Id| ⓘ - Maximum Drain Current: 10 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 166 pF, Package: TO-263

Question 3

What are equivalent components to 10N60L-TQ2-R?

Accepted Answer

Common equivalents include: 10N60L-TF2-T, 10N60G-TF2-T, 10N60L-TF3T-T, 10N60G-TF3T-T, 10N60L-T2Q-T, 10N60G-T2Q-T, 10N60L-TQ2-T, 10N60G-TQ2-T

10N60L-TQ2-R Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	156 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	600 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	30 V
\|Id\| ⓘ - Maximum Drain Current	10 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	166 pF
Package	TO-263