10N12 MOSFET — Specifications & Equivalents
About the 10N12
The 10N12 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 120 V, a continuous drain current (ID) of 10 A and an on-resistance (RDS(on)) of 0.3 Ω. It can dissipate up to 75 W and is rated to a junction temperature of 150 °C. It is available in TO-3 and TO-220 packages, so confirm the pinout of the exact variant you order.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 120 V
- Max continuous drain current (ID): 10 A
- On-resistance (RDS(on)): 0.3 Ω
- Power dissipation (PD): 75 W
- Max junction temperature (TJ): 150 °C
- Package: TO-3, TO-220
Typical applications
With its 120 V drain–source rating the 10N12 sits in the medium-voltage class of switching MOSFETs, typically found in 48 V and 96 V distribution systems, solar and telecom power stages, DC motor drives and intermediate-bus DC-DC converters.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 165 ns and an output capacitance (Coss) of 230 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 10N12
A drop-in substitute for the 10N12 must be the same N-channel type and offer a drain–source rating of at least 120 V, a continuous drain current rating of at least 10 A and an on-resistance no higher than 0.3 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO-3 and TO-220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 10N12?
The 10N12 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 120 V drain-source and 10 A continuous drain current.
What is the maximum voltage of the 10N12?
The 10N12 has a maximum drain-source voltage (Vds) of 120 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 10N12 handle?
It is rated for 10 A of continuous drain current, with power dissipation limited to 75 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the 10N12?
On-resistance (Rds(on)) is 0.3 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the 10N12 come in?
It is listed in TO-3 and TO-220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 10N12?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 120 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 10 A |
| Drain-Source On-Resistance (Rds) | 0.3 |
| Rise Time (tr) | 165 nS |
| Output Capacitance (Coss) | 230 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO-3 TO-220 |
| Power Dissipation (Pd) | 75 W |
Equivalent & Replacement Parts
No verified equivalents are listed for 10N12 yet.